Samsung 8GB DDR4 memory chips based on 2nd generation 10-nm scale

Samsung 8GB DDR4 memory chips based on 2nd generation 10-nm scale

Samsung announced the mass production of the industry’s first 8 Gb DDR4 DRAM memory chips according to the standards of the 10-nanometer second generation process technology. Such chips can be used in a wide range of computing devices. As the manufacturer notes, the new 8 Gb DDR4 DRAM chips have the highest performance and energy efficiency among such devices. In addition, they have the smallest physical dimensions.

Samsung 8GB DDR4 memory chips based on 2nd generation 10-nm scale

Memory chips DDR4 DRAM manufactured according to the standards of the 10-nanometer process technology of the second generation, provide an increase in production efficiency of 30% compared to the same chips of the company, but based on the technology of the first generation. Also, the improvement in the performance of chips is about 10%, and the increase in energy efficiency is about 15%. This was achieved through the introduction of improved proprietary logic design technology. The announced chips provide a throughput of 3600 Mbit / s for each connector, while similar chips based on the technology of the first generation provided a data transfer rate of 3200 Mbit / s per connector.

It is reported that Samsung has already completed the process of testing the compatibility of memory modules based on new chips with processors. Now such devices can be used as part of computer systems.

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